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Date (Default Date) Hs Code Product Description (Based On Hs Code) Net Weight CIF In USD Origin Country Details
31-01-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 10637 994396 CHINA
31-01-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 1 13 HONG KONG
31-01-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 3682 723129 JAPAN
31-01-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 246 130573 KOREA, REPUBLIC OF
31-01-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 270 30401 MALAYSIA
31-01-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 1961 246297 PHILIPPINES
31-01-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 56932 3082540 SINGAPORE
31-01-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 1200 190730 TAIWAN
31-01-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 896 160889 THAILAND
31-01-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 3 281 UNITED STATES
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 6 4897 AUSTRIA
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 37461 1526580 CHINA
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 1 53 FRANCE
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 2 1109 GERMANY, FED. REP. OF
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 1007 66763 HONG KONG
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 7240 944125 JAPAN
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 34006 1565340 KOREA, REPUBLIC OF
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 2471 240723 MALAYSIA
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 3 79 MEXICO
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 96 119850 MOROCCO
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 484 71996 PHILIPPINES
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 17615 1069670 SINGAPORE
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 3 881 SPAIN
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 4 419 SWEDEN
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 3547 185105 TAIWAN
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 2245 353649 THAILAND
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 2 5040 UNITED KINGDOM
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 115 36379 UNITED STATES
28-02-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 5345 445301 CHINA
28-02-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 144 2370 HONG KONG
28-02-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 6349 1201510 JAPAN
28-02-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 1199 119195 KOREA, REPUBLIC OF
28-02-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 187 21986 MALAYSIA
28-02-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 633 141756 PHILIPPINES
28-02-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 28529 1013370 SINGAPORE
28-02-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 1755 332563 TAIWAN
28-02-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 963 150810 THAILAND
28-02-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 1 140 UNITED STATES
28-02-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 1 76 BULGARIA
28-02-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 1 107 CANADA
28-02-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 31374 1438560 CHINA
28-02-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 17 2040 DENMARK
28-02-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 7 3391 GERMANY, FED. REP. OF
28-02-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 741 30304 HONG KONG
28-02-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 1 209 ITALY
28-02-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 3973 541548 JAPAN
28-02-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 31729 1290800 KOREA, REPUBLIC OF
28-02-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 2338 407578 MALAYSIA
28-02-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 18 9486 MEXICO
28-02-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 47 61200 MOROCCO


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