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Date (Default Date) Hs Code Product Description (Based On Hs Code) Net Weight FOB In USD Destination Country Details
31-01-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 36 20734 CHINA
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 4 515 AUSTRIA
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 34 66898 CHINA
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 0 2 INDIA
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 1 663 KOREA, REPUBLIC OF
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 677 176852 MALAYSIA
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 1 2 NETHERLANDS
31-01-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 15068 458871 SINGAPORE
28-02-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 34 21333 JAPAN
28-02-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 1 0 CHINA
28-02-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 963 134824 JAPAN
28-02-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 1 26 KOREA, REPUBLIC OF
28-02-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 6459 170276 SINGAPORE
28-02-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 28 93 THAILAND
28-02-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 1 18 UNITED STATES
31-03-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 2684 94466 HONG KONG
31-03-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 112 1834 KOREA, REPUBLIC OF
31-03-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 16066 417411 SINGAPORE
31-03-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 61 181 THAILAND
31-03-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 150 9790 VIET NAM
30-04-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 1.79 408.72 HONG KONG
30-04-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 5.18 1049.58 KOREA, REPUBLIC OF
30-04-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 80 5000 PERU
30-04-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 1864.72 53909.8 SINGAPORE
30-04-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 37.07 19870.2 THAILAND
30-04-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 1.7 306.13 VIET NAM
31-05-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 80.45 48683.1 CHINA
31-05-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 1283.65 344495 SINGAPORE
31-05-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 0.8 44.755 AUSTRIA
31-05-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 66.75 60121.5 CHINA
31-05-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 14.01 691.3 HONG KONG
31-05-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 69.18 1500.17 JAPAN
31-05-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 431.1 109412 MALAYSIA
31-05-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 8036.72 260389 SINGAPORE
31-05-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 2.75 29.09 TAIWAN
31-05-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 20.58 9368.7 THAILAND
31-05-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 2.1 1795.89 UNITED STATES
30-06-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 17 14579.3 SINGAPORE
30-06-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 16 35079.6 CHINA
30-06-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 1 36.9 JAPAN
30-06-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 12.4 680 KOREA, REPUBLIC OF
30-06-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 485.4 97346.9 MALAYSIA
30-06-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 26463.4 3626020 SINGAPORE
30-06-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 0.4 10.5 SLOVAKIA
31-07-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 9 1599.12 CHINA
31-07-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 27.275 21522 SINGAPORE
31-07-2019 85412100 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF <1 W 0.02 1.65 THAILAND
31-07-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 5 2141.5 AUSTRIA
31-07-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 9 28809.5 CHINA
31-07-2019 85412900 TRANSISTOR OTH THAN PHOTOSENSITIVE WITH A DISSIPATION RATE OF >=1 W 0.1 12.213 GERMANY, FED. REP. OF


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